Substrate processing apparatus and substrate processing method

ABSTRACT

A substrate processing apparatus includes a substrate holding unit that holds a substrate horizontally while rotating the substrate around a vertical rotational axis running through its center portion, an opposed member having an opposed surface that is opposed to an upper surface of the substrate, and a processing liquid discharge unit that includes a center portion discharge port on the opposed surface, that opens being opposed to the upper surface center portion of the substrate, and a peripheral portion discharge port on the opposed surface, that opens being opposed to the upper surface peripheral portion of the substrate, that discharges a processing liquid from the center portion discharge port to supply the processing liquid between the substrate and the opposed surface, and discharges the processing liquid from the peripheral portion discharge port to replenish the processing liquid between the substrate and the opposed surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 15/605,097, filed May 25, 2017, which claims priority to JapanesePatent Application Nos. 2016-104599 and 2017-3510, filed May 25, 2016and Jan. 12, 2017, the contents of all of which are incorporated hereinby reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a substrate processing apparatus and asubstrate processing method. Examples of substrates to be processedinclude semiconductor wafers, substrates for liquid crystal displays,substrates for plasma displays, substrates for FEDs (field emissiondisplays), substrates for optical disks, substrates for magnetic disks,substrates for magneto-optical disks, substrates for photomasks, ceramicsubstrates, substrates for solar cells, etc.

2. Description of Related Art

In the manufacturing steps for semiconductor devices and liquid crystaldisplay devices, processing is carried out using processing liquids onthe substrates, which may be semiconductor wafers or glass panels forliquid crystal displays. Japanese Unexamined Patent ApplicationPublication No. 2010-123884 discloses a single substrate processing typesubstrate processing apparatus that conducts processing of one substrateat a time. This publication proposes carrying out processing on theentire area of the upper surface of a substrate, while keeping theregion between the upper surface of the substrate and the lower surfaceof a shield plate in a fluid-tight state for the processing liquid.Specifically, the shield plate is situated proximal to the upper surfaceof the substrate and discharges the processing liquid from a centerportion discharge port provided at the center portion of the lowersurface of the shield plate (being opposed to the center portion of theupper surface of the substrate at the lower surface of the shieldplate), thus supplying the processing liquid in the narrow space betweenthe upper surface of the substrate and the lower surface of the shieldplate. The processing liquid discharged from the center portiondischarge port into the narrow space fills up the narrow space.

SUMMARY OF THE INVENTION

In the method described in Japanese Unexamined Patent ApplicationPublication No. 2010-123884, however, since the processing liquid issupplied only from the center portion discharge port into the narrowspace, the processing liquid can potentially drip off at the peripheralportion of the substrate. Consequently, the region between the uppersurface peripheral portion of the substrate and the opposed surface maynot be sufficiently filled with the processing liquid.

When the region between the upper surface peripheral portion of thesubstrate and the opposed surface fails to be sufficiently filled withthe processing liquid, at least a part of the upper surface peripheralportion of the substrate can potentially become exposed to theatmosphere between the upper surface peripheral portion and the opposedsurface.

When this occurs, the processing rate at the upper surface peripheralportion of the substrate is reduced, and may result in unprocessedsections in the upper surface peripheral portion of the substrate. Theupper surface of the substrate may fail to be evenly processed as aresult.

In other words, in order to evenly process the upper surface of thesubstrate with the processing liquid, it is desirable to satisfactorilyfill not only the region between the center portion of the upper surfaceof the substrate and the opposed surface but also the region between theupper surface peripheral portion of the substrate and the opposedsurface, with the processing liquid.

It is therefore an object of the present invention to provide asubstrate processing apparatus and substrate processing method that cansatisfactorily fill not only the region between the center portion ofthe upper surface of the substrate and the opposed surface but also theregion between the upper surface peripheral portion of the substrate andthe opposed surface with the processing liquid, thereby allowing theupper surface of the substrate to be evenly processed with theprocessing liquid.

The present invention provides a substrate processing apparatusincluding a substrate holding unit that holds a substrate horizontallywhile rotating the substrate around a vertical rotational axis runningthrough its center portion, an opposed member having an opposed surfacethat is opposed to an upper surface of the substrate, and a processingliquid discharge unit that includes a center portion discharge port onthe opposed surface that opens being opposed to the center portion ofthe upper surface of the substrate, and a peripheral portion dischargeport on the opposed surface that opens being opposed to the uppersurface peripheral portion of the substrate, that discharges aprocessing liquid from the center portion discharge port to supply theprocessing liquid between the substrate and the opposed surface, anddischarges the processing liquid from the peripheral portion dischargeport to replenish the processing liquid between the substrate and theopposed surface.

According to this arrangement, the processing liquid discharged from theperipheral portion discharge port replenishes the processing liquidbetween the upper surface peripheral portion of the substrate and theopposed surface, allowing the processing liquid to be adequately spreadover the upper surface peripheral portion of the substrate. It isthereby possible to satisfactorily fill not only the region between thecenter portion of the upper surface of the substrate and the opposedsurface but also the region between the upper surface peripheral portionof the substrate and the opposed surface with the processing liquid, andthus to evenly process the upper surface of the substrate with theprocessing liquid.

According to a preferred embodiment of the invention, the processingliquid discharge unit includes a liquid reservoir provided in theopposed member, that is capable of accumulating the processing liquiddischarged from the peripheral portion discharge port.

According to this arrangement, the processing liquid accumulated in theliquid reservoir provided in the opposed member is discharged from theperipheral portion discharge port. Since both a liquid reservoir and aperipheral portion discharge port are provided on the peripheralportion, it is possible to satisfactorily supply the processing liquidto the peripheral portion discharge port.

In addition, the processing liquid discharge unit may further include aconnecting hole that connects the interior of the liquid reservoir withthe peripheral portion discharge port. In this case, fluid will bedistributed between the upper surface peripheral portion of thesubstrate and the peripheral portion discharge port on the opposedsurface, and the reduced pressure of the connecting hole as the fluid isdistributed may be used to discharge the processing liquid accumulatedin the liquid reservoir from the peripheral portion discharge port viathe connecting hole.

According to this arrangement, the peripheral portion discharge port andthe connecting hole are brought to reduced pressure as the fluid flowsbetween the upper surface peripheral portion of the substrate and theopposed surface. With the processing liquid accumulated in the liquidreservoir, reduced pressure in the peripheral portion discharge port andthe connecting hole causes the processing liquid accumulated in theliquid reservoir to be guided to the connecting hole by the Venturieffect, and discharged from the peripheral portion discharge port.Therefore, with the processing liquid accumulated in the liquidreservoir, the processing liquid is discharged from the peripheralportion discharge port as fluid is distributed between the upper surfaceperipheral portion of the substrate and the opposed surface. As aresult, it is generally possible to provide an arrangement in which theprocessing liquid can be discharged from the peripheral portiondischarge port when the processing liquid has been accumulated in theliquid reservoir and the fluid has been distributed between the uppersurface peripheral portion of the substrate and the opposed surface.

The fluid that is distributed between the upper surface peripheralportion of the substrate and the area surrounding the peripheral portiondischarge port on the opposed surface may also be the processing liquid.

With such an arrangement, the peripheral portion discharge port and theconnecting hole are brought to reduced pressure as the processing liquidflows between the upper surface peripheral portion of the substrate andthe opposed surface. With the processing liquid accumulated in theliquid reservoir, reduced pressure in the peripheral portion dischargeport and the connecting hole causes the processing liquid accumulated inthe liquid reservoir to be guided to the connecting hole by the Venturieffect, and discharged from the peripheral portion discharge port.Consequently, as the processing liquid that has been discharged from thecenter portion discharge port is distributed between the upper surfaceperipheral portion of the substrate and the opposed surface, with theprocessing liquid accumulated in the liquid reservoir, the processingliquid can be discharged from the peripheral portion discharge port.This allows the processing liquid to be discharged from the peripheralportion discharge port without processing liquid being delivered out tothe peripheral portion discharge port, thereby making it possible toeliminate any arrangement for delivering out the processing liquid tothe peripheral portion discharge port.

The fluid that is distributed between the upper surface peripheralportion of the substrate and the area surrounding the peripheral portiondischarge port on the opposed surface may also be a gas.

With such an arrangement, the peripheral portion discharge port and theconnecting hole are brought to reduced pressure as the gas flows betweenthe upper surface peripheral portion of the substrate and the opposedsurface. With the processing liquid accumulated in the liquid reservoir,reduced pressure in the peripheral portion discharge port and theconnecting hole causes the processing liquid accumulated in the liquidreservoir to be guided to the connecting hole by the Venturi effect, anddischarged from the peripheral portion discharge port. Therefore, whilethe processing liquid is in an accumulated state in the liquidreservoir, the processing liquid is discharged from the peripheralportion discharge port as gas is distributed between the upper surfaceperipheral portion of the substrate and the opposed surface. As aresult, it is generally possible to provide an arrangement in which theprocessing liquid can be discharged from the peripheral portiondischarge port when the processing liquid has been accumulated in theliquid reservoir and the gas has been distributed between the uppersurface peripheral portion of the substrate and the opposed surface.

Protrusions may also be provided on the opposed surface, in the areasurrounding the peripheral portion discharge port, in order to increasethe flow rate of the fluid flowing between the upper surface peripheralportion of the substrate and the area surrounding the peripheral portiondischarge port on the opposed surface.

With such an arrangement, providing protrusions on the opposed surfacecan increase the flow rate of fluid flowing between the upper surfaceperipheral portion of the substrate and the area surrounding theperipheral portion discharge port on the opposed surface. It will thusbe possible to increase the volume of processing liquid guided from theliquid reservoir to the peripheral portion discharge port via theconnecting hole. As a result, it will be possible to dischargeprocessing liquid at a sufficient flow rate from the peripheral portiondischarge port.

A thick portion may also be provided on the opposed surface, furthertoward the peripheral portion of the opposed member than the peripheralportion discharge port, in order to increase the flow rate of the fluidflowing between the upper surface peripheral portion of the substrateand the area surrounding the peripheral portion discharge port on theopposed surface.

With such an arrangement, providing a thick portion on the opposedsurface further toward the peripheral portion of the opposed member thanthe peripheral portion discharge port can increase the flow rate offluid flowing between the upper surface peripheral portion of thesubstrate and the area surrounding the peripheral portion discharge porton the opposed surface. This will increase the volume of processingliquid guided from the liquid reservoir to the peripheral portiondischarge port via the connecting hole. As a result, it will be possibleto discharge processing liquid at a sufficient flow rate from theperipheral portion discharge port.

Moreover, the peripheral portion discharge port may be set to a sizesuch that the processing liquid is not discharged from the peripheralportion discharge port when the processing liquid is not flowing betweenthe upper surface peripheral portion of the substrate and the part ofthe opposed surface surrounding the peripheral portion discharge port.

With such an arrangement, the peripheral portion discharge port isformed with a small enough size so that the processing liquid is notsupplied to the peripheral portion discharge port when the fluid is notflowing between the upper surface peripheral portion of the substrateand the part of the opposed surface surrounding the peripheral portiondischarge port. Although force acts on the processing liquid accumulatedin the liquid reservoir toward the peripheral portion discharge port, bythe weight of the processing liquid itself, the processing liquid is notdischarged from the peripheral portion discharge port when the fluid isnot flowing between the upper surface peripheral portion of thesubstrate and the part of the opposed surface surrounding the peripheralportion discharge port. The processing liquid begins to be dischargedfrom the peripheral portion discharge port only by the Venturi effect,when fluid between the upper surface peripheral portion of the substrateand the part of the opposed surface surrounding the peripheral portiondischarge port is distributed. Since the processing liquid is notdischarged from the peripheral portion discharge port when the fluid isnot flowing between the upper surface peripheral portion of thesubstrate and the part of the opposed surface surrounding the peripheralportion discharge port, it is possible to accumulate the processingliquid in the liquid reservoir prior to the timing of discharge of theperipheral portion discharge port.

The liquid reservoir may also include a liquid reservoir groove formedon a surface of the opposed member opposite the opposed surface.

With such an arrangement, the liquid reservoir includes a liquidreservoir groove formed on the opposite side, thereby allowing theliquid reservoir to be provided in a more simple manner. Moreover, byproviding a processing liquid supply unit being opposed to the liquidreservoir groove, it is possible to easily accomplish supply of theprocessing liquid to the liquid reservoir.

The substrate processing apparatus may further include an opposed memberrotating unit that rotates the opposed member around a rotational axis.In this case, the liquid reservoir may further include an embankmentthat restricts outflow of the processing liquid that has accumulated inthe liquid reservoir groove, from the liquid reservoir groove.

With such an arrangement, it is possible to effectively restrict outflowof the processing liquid from the liquid reservoir groove, even when theopposed member is rotated around the rotational axis. This allows theprocessing liquid in the liquid reservoir to be satisfactorilyaccumulated.

The liquid reservoir may further include a hood portion that protrudesfrom the top edge of the embankment toward the radially inner side ofthe opposed member.

With such an arrangement, the hood portion can even more effectivelyrestrict outflow of the processing liquid from the liquid reservoirgroove. This allows the processing liquid in the liquid reservoir to beeven more satisfactorily accumulated.

The liquid reservoir may also further include a liquid reservoir spaceformed inside the opposed member.

With such an arrangement, it is possible to effectively prevent outflowof the processing liquid from the liquid reservoir groove, even when theopposed member is rotated around the rotational axis. This allows theprocessing liquid in the liquid reservoir to be satisfactorilyaccumulated.

There may be further included a processing liquid supply unit thatsupplies processing liquid to the liquid reservoir. In this case, theprocessing liquid supply unit can supply processing liquid to the liquidreservoir when discharge of processing liquid from the center portiondischarge port is initiated.

With such an arrangement, processing liquid is supplied to the liquidreservoir when discharge of processing liquid from the center portiondischarge port is initiated. After discharge of processing liquid fromthe center portion discharge port has been initiated, discharge ofprocessing liquid from the peripheral portion discharge port is theninitiated. Thus, processing liquid accumulates in the liquid reservoirwhen discharge of processing liquid from the peripheral portiondischarge port is initiated. Since processing liquid can be dischargedfrom the peripheral portion discharge port while the processing liquidis in an accumulated state in the liquid reservoir, discharge of theprocessing liquid from the peripheral portion discharge port can beaccomplished in a satisfactory manner.

A plurality of peripheral portion discharge ports may also be providedalong the circumferential direction of the opposed member.

Since a plurality of peripheral portion discharge ports are providedalong the circumferential direction of the opposed member according tothis arrangement, it is possible to replenish the processing liquid in asufficient amount between the upper surface peripheral portion of thesubstrate and the opposed surface. This allows the region between theupper surface peripheral portion of the substrate and the opposedsurface to be more satisfactorily filled with processing liquid.

The processing liquid may also include a chemical liquid.

The substrate processing apparatus may also be an apparatus for removalof a resist from the upper surface of the substrate. In this case, thechemical liquid may be ozone water that removes a resist from thesubstrate.

With such an arrangement, the region between the substrate and theopposed surface is filled not only by ozone water discharged from thecenter portion discharge port, but also by ozone water discharged fromthe peripheral portion discharge port. Since the ozone water dischargedfrom the peripheral portion discharge port replenishes the ozone waterbetween the upper surface peripheral portion of the substrate and theopposed surface, it is possible to adequately spread the processingliquid over the upper surface peripheral portion of the substrate. It isthereby possible to satisfactorily fill not only the region between thecenter portion of the upper surface of the substrate and the opposedsurface but also the region between the upper surface peripheral portionof the substrate and the opposed surface with the ozone water. It istherefore possible to satisfactorily remove not only the resist on thecenter portion of the upper surface of the substrate, but also theresist on the upper surface peripheral portion of the substrate, andtherefore to satisfactorily remove the resist over the entire region ofthe upper surface of the substrate.

The present invention further provides a substrate processing methodwherein the upper surface of a substrate is processed with a processingliquid from a processing liquid discharge unit including a centerportion discharge port on an opposed surface being opposed to the uppersurface of the substrate, that opens being opposed to the center portionof the upper surface of the substrate, and a peripheral portiondischarge port on the opposed surface, that opens being opposed to theupper surface peripheral portion of the substrate, the substrateprocessing method including a substrate rotating step in which thesubstrate is rotated around a vertical rotational axis running throughits center portion, and a processing liquid discharging step in which,simultaneously with the substrate rotating step, the processing liquidis discharged from the center portion discharge port to supply theprocessing liquid between the substrate and the opposed surface, inorder to discharge the processing liquid from the center portiondischarge port and fill the region between the substrate and the opposedsurface with the processing liquid, and the processing liquid isdischarged from the peripheral portion discharge port to replenish theprocessing liquid between the substrate and the opposed surface.

According to this method, the region between the substrate and theopposed surface is filled not only by processing liquid discharged fromthe center portion discharge port, but also by processing liquiddischarged from the peripheral portion discharge port. The processingliquid discharged from the peripheral portion discharge port replenishesthe processing liquid between the upper surface peripheral portion ofthe substrate and the opposed surface, allowing the processing liquid tobe adequately spread over the upper surface peripheral portion of thesubstrate. It is thereby possible to satisfactorily fill not only theregion between the center portion of the upper surface of the substrateand the opposed surface but also the region between the upper surfaceperipheral portion of the substrate and the opposed surface with theprocessing liquid, and thus to evenly process the upper surface of thesubstrate with the processing liquid.

The processing liquid unit may include a liquid reservoir that canaccumulate the processing liquid discharged from the peripheral portiondischarge port, and the method may further include a processing liquidsupplying step in which the processing liquid is supplied to the liquidreservoir when the processing liquid supplying step is initiated.

According to this method, processing liquid is supplied to the liquidreservoir when discharge of processing liquid from the center portiondischarge port is initiated. After discharge of processing liquid fromthe center portion discharge port has been initiated, discharge ofprocessing liquid from the peripheral portion discharge port is theninitiated. Thus, processing liquid accumulates in the liquid reservoirwhen discharge of processing liquid from the peripheral portiondischarge port is initiated. Since processing liquid can be dischargedfrom the peripheral portion discharge port with the processing liquidaccumulated in the liquid reservoir, discharge of the processing liquidfrom the peripheral portion discharge port can be accomplished in asatisfactory manner.

The processing liquid unit may further include a liquid reservoir thatcan accumulate the processing liquid discharged from the peripheralportion discharge port. In addition, the liquid reservoir may besituated above the peripheral portion discharge port, and the interiorof the liquid reservoir and the peripheral portion discharge port may beconnected via a connecting hole. Also, the construction may be such thatprocessing liquid accumulated in the liquid reservoir is discharged fromthe peripheral portion discharge port via the connecting hole byreduction in pressure in the connecting hole, as fluid is distributedbetween the upper surface peripheral portion of the substrate and thesurrounding region of the peripheral portion discharge port on theopposed surface. In this case, the substrate processing method mayfurther include a spin drying step in which the substrate is subjectedto high-speed rotation around a vertical rotational axis running throughthe center portion to cause drying by shaking off, without theprocessing liquid being accumulated in the liquid reservoir.

According to this method, the peripheral portion discharge port and theconnecting hole are brought to reduced pressure as gas flows between theupper surface peripheral portion of the substrate and the part of theopposed surface surrounding the peripheral portion discharge port, whenprocessing liquid is not accumulated in the liquid reservoir, or inother words, when gas is present inside the liquid reservoir. As aresult the gas present inside the liquid reservoir is guided to theconnecting hole by the Venturi effect, and discharged from theperipheral portion discharge port. The gas is thus discharged from theperipheral portion discharge port toward the upper surface peripheralportion of the substrate. Furthermore, since the gas is blown from theperipheral portion discharge port onto the peripheral portion of theupper surface of the substrate, the upper surface peripheral portion ofthe substrate can be satisfactorily dried. This allows the substratedrying performance to be increased.

The processing liquid may also include a chemical liquid.

The substrate processing method may also be a method for removal of aresist from the upper surface of the substrate. In this case, thechemical liquid may be ozone water that removes a resist from thesubstrate.

The aforementioned as well as other objects, features, and effects ofthe present invention will be made clear by the following description ofthe preferred embodiments, with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustrative plan view serving for illustration of thelayout of the interior of a substrate processing apparatus according toa first preferred embodiment of the present invention.

FIG. 2 is an illustrative cross-sectional view serving for illustrationof an arrangement example of a processing unit included in the substrateprocessing apparatus.

FIG. 3 is a cross-sectional view showing the state in which processingliquid is discharged from a peripheral portion discharge port shown inFIG. 2.

FIG. 4 is a partial plan view of the opposed member included in theprocessing unit.

FIG. 5 is a partial bottom view of the opposed member.

FIG. 6 is a cross-sectional view showing the state in which gas isdischarged from a peripheral portion discharge port.

FIG. 7 is a block diagram serving for illustration of the electricalconfiguration of the main part of the substrate processing apparatus.

FIG. 8 is a flow diagram serving for illustration of an example ofsubstrate processing performed by the processing unit.

FIG. 9 is a cross-sectional view showing a first modification example ofa liquid reservoir groove.

FIG. 10 is a cross-sectional view showing a second modification exampleof a liquid reservoir groove.

FIG. 11 is a cross-sectional view showing a third modification exampleof a liquid reservoir groove.

FIG. 12 is a cross-sectional view serving for illustration of anarrangement example of a processing liquid discharge unit according to asecond preferred embodiment of the present invention.

FIG. 13 is a magnified cross-sectional view serving for illustration ofan arrangement example of a processing unit of a substrate processingapparatus according to a third preferred embodiment of the presentinvention.

FIG. 14 is a flow diagram serving for illustration of an example ofsubstrate processing performed by the processing unit.

FIG. 15 is a cross-sectional view showing a fourth modification exampleof a liquid reservoir groove.

FIG. 16 is a cross-sectional view showing a fifth modification exampleof liquid reservoir grooves.

FIG. 17 is a cross-sectional view serving for illustration of anarrangement example of a processing liquid discharge unit according to afourth preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 1 is an illustrative plan view serving for illustration of a layoutof the interior of a substrate processing apparatus 1 according to afirst preferred embodiment of the present invention. The substrateprocessing apparatus 1 is a single substrate processing type apparatusthat conducts processing of a discoid substrate W such as asemiconductor wafer, one at a time using a processing liquid orprocessing gas. The substrate processing apparatus 1 includes aplurality of processing units 2 that are to process substrates W using aprocessing liquid, load ports LP mounting carriers C that house aplurality of substrates W to be processed by the processing units 2,transfer robots IR and CR that transport the substrates W between theload ports LP and the processing units 2, and a controller 3 thatcontrols the substrate processing apparatus 1. The transfer robot IRtransports the substrates W between the carriers C and the substratetransfer robot CR. The substrate transfer robot CR transports thesubstrates W between the transfer robot IR and the processing units 2.The plurality of processing units 2 may have the same construction, forexample.

FIG. 2 is an illustrative cross-sectional view serving for illustrationof an arrangement example of a processing unit 2. FIG. 3 is across-sectional view showing the state in which a chemical liquid(processing liquid) is discharged from a peripheral portion processingliquid discharge port 10. FIG. 4 is a partial plan view of an opposedmember 8. FIG. 5 is a partial bottom view of the opposed member 8. FIG.6 is a cross-sectional view showing the state in which gas is dischargedfrom a peripheral portion processing liquid discharge port 10.

Each processing unit 2 includes a box-shaped chamber 4 with an interiorspace, a spin chuck (substrate holding unit) 5 that holds a singlesubstrate W in the chamber 4 in a horizontal position and rotates thesubstrate W around a vertical rotational axis A1 running through thecentral of the substrate W, a first processing liquid discharge unit 11including an opposed member 8, having an opposed surface 7 that isopposed to an upper surface of the substrate W held on the spin chuck 5,a central processing liquid discharge port 9 and peripheral portionprocessing liquid discharge ports (peripheral portion discharge ports)10 that open at each opposed surface 7, that discharges a chemicalliquid (processing liquid) from the central processing liquid dischargeport 9 and the peripheral portion processing liquid discharge ports 10onto the upper surface of the substrate W held on the spin chuck 5, arinse liquid supply unit 12 for supplying rinse liquid to the uppersurface of the substrate W held on the spin chuck 5, and a tubularprocessing cup 13 that surrounds the spin chuck 5.

The chamber 4 includes a box-shaped partition wall 14, an FFU (fanfilter unit) 15 as a fan unit that delivers clean air from above thepartition wall 14 to the partition wall 14 interior (corresponding tothe chamber 4 interior), and an exhaust device (not shown) thatdischarges gas from below the partition wall 14 into the chamber 4.

The FFU 15 is disposed above the partition wall 14, and is mounted onthe ceiling of the partition wall 14. The FFU 15 delivers clean air fromthe ceiling of the partition wall 14 into the chamber 4. The exhaustdevice (not shown) is connected to the bottom part of the processing cup13 via an exhaust duct 16 connected to the processing cup 13 interior,and suctions the interior of the processing cup 13 from the bottom partof the processing cup 13. A downflow (downward flow) is formed insidethe chamber 4 by the FFU 15 and the exhaust device (not shown).

The spin chuck 5 used is a clampable chuck that sandwiches the substrateW in the horizontal direction and holds the substrate W horizontally.Specifically, the spin chuck 5 includes a spin motor 17, a lower spinshaft 18 integrated with the drive shaft of the spin motor 17, and adiscoid spin base 19 mounted essentially horizontally on the upper endof the lower spin shaft 18.

The spin base 19 includes a horizontal circular upper surface 19 ahaving a larger outer diameter than the outer diameter of the substrateW. On the upper surface 19 a, there are disposed a plurality (3 or more,such as 6) of clamping members 20, at the peripheral edge portion. Theplurality of clamping members 20 are disposed at appropriate intervals,such as equal intervals, on the upper surface peripheral edge portion ofthe spin base 19, on the circumference corresponding to the peripheralportion shape of the substrate W.

The spin chuck 5 is not limited to a clampable type, and for example, itmay be a vacuum adsorption type (vacuum chuck) wherein the substrate Wis held in a horizontal position by vacuum adsorption from the rearsurface of the substrate W, and rotated in that state around a verticalrotational axis, to rotate the substrate W held on the spin chuck 5.

The opposed member 8 includes a opposed plate 21, and an upper spinshaft 22 provided coaxially with the opposed plate 21. The opposed plate21 has a discoid shape with a diameter that is approximately the same asor larger than the substrate W. The opposed surface 7 forms the lowersurface of the opposed plate 21, and it is circular and being opposed tothe entire region of the upper surface of the substrate W.

At the center portion of the opposed surface 7, there is formed acylindrical through-hole 23 running vertically through the opposed plate21 and the upper spin shaft 22. The inner peripheral wall of thethrough-hole 23 is partitioned by a cylindrical surface. A verticallyextending upper nozzle 24 is inserted into (the interior of) thethrough-hole 23.

An opposed member rotating unit 25 is coupled with the upper spin shaft22. The opposed member rotating unit 25 rotates the upper spin shaft 22around the rotational axis A2 together with the opposed plate 21. Anopposed member lifting unit 26 having a construction including anelectric motor, ball screw, etc., is coupled to the opposed plate 21.The opposed member lifting unit 26 raises and lowers the opposed plate21 in the vertical direction, together with the upper nozzle 24. Theopposed member lifting unit 26 raises and lowers the opposed plate 21and the upper nozzle 24, between a proximal position where the opposedsurface 7 of the opposed plate 21 is proximal to the upper surface ofthe substrate W held on the spin chuck 5 (the position indicated bydot-and-dash lines in FIG. 2) and a retreat position provided above theproximal position (the position indicated by solid lines in FIG. 2). Theopposed member lifting unit 26 can hold the opposed plate 21 at eachposition between the proximal position and the retreat position.

The first processing liquid discharge unit 11 includes the centralprocessing liquid discharge port 9, a central processing liquid supplyunit 27 for supplying processing liquid (for example, a chemical liquid)to the central processing liquid discharge port 9, the peripheralportion processing liquid discharge ports 10, and peripheral portionprocessing liquid supply units 28 for supplying a chemical liquid to theperipheral portion processing liquid discharge ports 10.

The central processing liquid discharge port 9 opens being opposed tothe center portion of the upper surface of the substrate W held by thespin chuck 5. The central processing liquid discharge port 9 is formedby a discharge port provided on the tip (bottom end) of the upper nozzle24.

The central processing liquid supply unit 27 includes the upper nozzle24, a first processing liquid piping 29 connected to the centralprocessing liquid discharge port 9, a first processing liquid valve 30for opening and closing the first processing liquid piping 29, and afirst flow control valve 31 for adjustment of the degree of opening ofthe first processing liquid piping 29 to adjust the discharge flow rate.While not shown here, the first flow control valve 31 includes a valvebody with a valve seat provided inside it, a valve element that opensand closes the valve seat, and an actuator that moves the valve elementbetween the open position and the closed position. The other flowcontrol valves have a similar construction.

When the first processing liquid valve 30 is opened, the chemical liquidis discharged from the central processing liquid discharge port 9 towardthe center portion of the upper surface of the substrate W. Thedischarge flow rate of the chemical liquid from the central processingliquid discharge port 9 can be varied by adjusting the degree of openingof the first flow control valve 31. The processing liquid supplied tothe central processing liquid discharge port 9 includes a chemicalliquid. For this preferred embodiment, the chemical liquid supplied tothe central processing liquid discharge port 9 may be ozone water, forexample (ozone water containing ozone gas at a high concentration, to beused for resist removal processing).

The peripheral portion processing liquid discharge ports 10 open beingopposed to the upper surface peripheral portion 6 of the substrate Wheld by the spin chuck 5. Throughout the present specification, forexample, the region with a width of approximately 75 mm inward from theperipheral edge of a substrate W with an outer diameter of 450 mm, onthe upper surface of the substrate W, will be referred to as the “uppersurface peripheral portion” 6.

For this preferred embodiment, a plurality of peripheral portionprocessing liquid discharge ports 10 are provided. A chemical liquid isdischarged from each peripheral portion processing liquid discharge port10 toward the upper surface peripheral portion 6 of the substrate W. Theplurality of peripheral portion processing liquid discharge ports 10 aredisposed on the circumference surrounding the rotational axis A2 in aconcentric manner. The plurality of peripheral portion processing liquiddischarge ports 10 are disposed in the circumferential direction of theopposed member 8, with equal intervals between them, for example.

Each peripheral portion processing liquid supply unit 28 includes aliquid reservoir 60 capable of accumulating a chemical liquid.

The liquid reservoir 60 includes a liquid reservoir groove 32 formed onthe upper surface (the surface on the side opposite the opposed surface7) 21 a of the opposed plate 21. Each peripheral portion processingliquid supply unit 28 further includes a connecting hole 33 thatconnects the bottom part of the liquid reservoir groove 32 and theperipheral portion processing liquid discharge port 10, and a firstprocessing liquid supply unit 34 that supplies (replenishes) thechemical liquid to the liquid reservoir groove 32. The connecting hole33 is formed with a sufficiently smaller diameter than the base area ofthe liquid reservoir groove 32.

As shown in FIG. 3 and FIG. 4, the liquid reservoir groove 32 is acircular annular groove centered on the rotational axis A2, designed toallow accumulation of the chemical liquid in its interior. The liquidreservoir groove 32 is provided on the peripheral portion of the opposedmember 8. For this preferred embodiment, the liquid reservoir groove 32is disposed in a manner covering the upper region of each peripheralportion processing liquid discharge port 10. The liquid reservoir groove32 has a rectangular cross-section.

As shown in FIG. 3 and FIG. 4, one connecting hole 33 is provided foreach peripheral portion processing liquid discharge port 10. Thecross-sectional shapes and sizes of the connecting holes 33 are equal tothose of the peripheral portion processing liquid discharge ports 10. Inother words, each connecting hole 33 opens to the opposed surface 7,forming a peripheral portion processing liquid discharge port 10. Atapered surface 50 is formed at the region of the bottom part of theliquid reservoir groove 32 surrounding the connecting hole 33, centeredaround the connecting hole 33. The upper end of the connecting hole 33is open at the lowermost part (center portion) of the tapered surface50.

The cross-sectional area of the connecting hole 33 is formed with asmall enough size so that the chemical liquid is not supplied to theperipheral portion processing liquid discharge port 10 when the fluid isnot flowing between the upper surface peripheral portion 6 of thesubstrate W and the opposed surface 7. Force acts on the chemical liquidaccumulated in the liquid reservoir groove 32 toward the peripheralportion processing liquid discharge port 10 formed at the bottom part ofthe liquid reservoir groove 32, by the weight of the chemical liquiditself. However, since the cross-sectional area of the connecting hole33 is sufficiently small, the chemical liquid does not infiltratethrough the connecting hole 33 due to the surface tension of thechemical liquid.

As shown in FIG. 3, a protrusion 35 is formed in the opposed surface 7,at a position being opposed to the center portion of the upper surfaceof the substrate W held by the spin chuck 5. The protrusion 35 forms acircular annular shape surrounding the rotational axis A2 in aconcentric manner. The cross-sectional shape of the protrusion 35,perpendicular to the circumferential direction of the opposed member, isapproximately triangular conic. The peripheral portion processing liquiddischarge port 10 is formed on the bottom end (tip) of the protrusion35.

As shown in FIG. 3, the peripheral portion processing liquid dischargeport 10 and connecting hole 33 are brought to reduced pressure as fluid(chemical liquid (processing liquid), according to the first preferredembodiment and second preferred embodiment) flows between the uppersurface peripheral portion 6 of the substrate W and the opposed surface7. As shown in FIG. 3, with the chemical liquid accumulated in theliquid reservoir groove 32, reduced pressure in the peripheral portionprocessing liquid discharge port 10 and the connecting hole 33 causesthe chemical liquid accumulated in the liquid reservoir groove 32 to beguided to the connecting hole 33 by the Venturi effect, and dischargedfrom the peripheral portion processing liquid discharge port 10. Thatis, by accumulating a sufficient amount of chemical liquid in the liquidreservoir groove 32, it is possible to discharge the chemical liquidfrom the peripheral portion processing liquid discharge port 10 togetherwith distribution of the chemical liquid that has been discharged fromthe central processing liquid discharge port 9, between the uppersurface peripheral portion 6 of the substrate W and the opposed surface7.

Since the cross-sectional area of the connecting hole 33 is sufficientlysmall for this preferred embodiment, the chemical liquid begins to bedischarged from the peripheral portion processing liquid discharge port10 only by the Venturi effect when the chemical liquid is distributedbetween the upper surface peripheral portion of the substrate W and theopposed surface 7. Since the chemical liquid is not discharged from theperipheral portion processing liquid discharge port 10 when the chemicalliquid is not flowing between the upper surface peripheral portion 6 ofthe substrate and the opposed surface 7, the chemical liquid can beaccumulated in the liquid reservoir groove 32 prior to the timing ofdischarge through the peripheral portion processing liquid dischargeport 10, thereby allowing undesired dripping of liquid to be prevented.

Moreover, providing the protrusion 35 on the opposed surface 7 canincrease the flow rate of chemical liquid flowing between the uppersurface peripheral portion 6 of the substrate W and the surrounding ofthe peripheral portion processing liquid discharge port 10 on theopposed surface 7. It will thus be possible to increase the volume ofchemical liquid guided from the liquid reservoir groove 32 to theperipheral portion processing liquid discharge port 10 via theconnecting hole. As a result, it will be possible to discharge chemicalliquid at a sufficient flow rate from the peripheral portion processingliquid discharge port 10.

On the other hand, as shown in FIG. 6, when gas (for example, inert gas)flows between the upper surface peripheral portion 6 of the substrateWand the opposed surface 7 without chemical liquid accumulated in theliquid reservoir groove 32, i.e. with air present inside the liquidreservoir groove 32, the pressure is concomitantly reduced in theperipheral portion processing liquid discharge port 10 and theconnecting hole 33. When the pressure in the peripheral portionprocessing liquid discharge port 10 and the connecting hole 33 isreduced, air present inside the liquid reservoir groove 32 is guided tothe connecting hole 33 by the Venturi effect, and discharged from theperipheral portion processing liquid discharge port 10.

As shown in FIG. 2, the first processing liquid supply unit 34 includesa replenishing nozzle 36, a second processing liquid piping 37 connectedto the replenishing nozzle 36, and a second processing liquid valve 38interposed in the second processing liquid piping 37. The replenishingnozzle 36 orients its discharge port toward the liquid reservoir groove32. When the second processing liquid valve 38 is opened, the chemicalliquid is discharged from the replenishing nozzle 36 toward the liquidreservoir groove 32. The chemical liquid supplied to the liquidreservoir groove 32 accumulates in the liquid reservoir groove 32. Thechemical liquid accumulated in the liquid reservoir groove 32 is, forexample, ozone water (ozone water containing a high concentration ofozone gas to be used for resist removal processing).

The rinse liquid supply unit 12 includes a rinse liquid nozzle 41. Therinse liquid nozzle 41 is, for example, a straight nozzle thatdischarges liquid in a continuous flowing state, and it is disposed in afixed manner above the spin chuck 5, with its discharge port oriented tothe center portion of the upper surface of the substrate W. A rinseliquid piping 42 through which rinse liquid is supplied from a rinseliquid supply source is connected to the rinse liquid nozzle 41. Partwayalong the rinse liquid piping 42 there is interposed a rinse liquidvalve 43 for switching to halt discharge/supply of the rinse liquid fromthe rinse liquid nozzle 41. When the rinse liquid valve 43 is opened, acontinuous flow of rinse liquid supplied from the rinse liquid piping 42to the rinse liquid nozzle 41 is discharged from the discharge port setat the bottom end of the rinse liquid nozzle 41. When the rinse liquidvalve 43 is closed, discharge of the rinse liquid from the rinse liquidpiping 42 to the rinse liquid nozzle 41 is halted. The rinse liquid isdeionized water (DIW), for example, but is not limited to DIW and mayinstead be carbonated water, electrolytic ion water, hydrogen water ordiluted (for example, about 10 ppm to 100 ppm) hydrochloric acid water.

Also, each rinse liquid nozzle 41 does not need to be disposed in afixed manner with respect to the spin chuck 5, and for example, it maybe in the form of a scan nozzle mounted on a swingable arm within ahorizontal plane above the spin chuck 5, whereby the liquid landingposition of the rinse liquid on the upper surface of the substrate W isscanned by swinging of the arm.

As shown in FIG. 2, the processing unit 2 includes a first inert gaspipe 44 that supplies an inert gas into the tubular space between theperipheral portion of the main body of the upper nozzle 24 and the innerperiphery of the opposed plate 21 (the peripheral portion of thethrough-hole 23), and a first inert gas valve 45 interposed within thefirst inert gas pipe 44. When the first inert gas valve 45 is opened,the inert gas from the inert gas supply source is discharged downwardfrom the lower surface center portion of the opposed plate 21, throughthe region between the peripheral portion of the main body of the uppernozzle 24 and the inner periphery of the opposed plate 21. Thus, whenthe first inert gas valve 45 is opened with the opposed plate 21disposed at the proximal position, the inert gas discharged from thelower surface center portion of the opposed plate 21 spreads downwardbetween the upper surface of the substrate W and the opposed surface 7of the opposed plate 21 (in a direction away from the rotational axisA1), and the air between the substrate W and the opposed plate 21 isexchanged with the inert gas. The inert gas flowing in the first inertgas pipe 44 is nitrogen gas, for example. The inert gas is not limitedto nitrogen gas, and may instead be a different inert gas such as heliumgas or argon gas.

As shown in FIG. 2, the processing cup 13 is disposed further downwardthan the substrate W that is held by the spin chuck 5 (in a directionaway from the rotational axis A1). The processing cup 13 surrounds thespin base 19. When processing liquid (ozone water droplets, waterdroplets, chemical liquid or rinse liquid) is supplied to the substrateW while the spin chuck 5 is rotating the substrate W, the processingliquid supplied to the substrate W is shaken off to the surrounding areaof the substrate W. During the time when the processing liquid issupplied to the substrate W, the top edge 13 a of the processing cup 13that has been opened upward is disposed higher than the spin base 19.Thus, the processing liquid that has been discharged to the surroundingarea of the substrate W is received by the processing cup 13. Theprocessing liquid received into the processing cup 13 is then deliveredto a collecting apparatus or waste liquid apparatus (not shown).

FIG. 7 is a block diagram serving for illustration of the electricalconfiguration of the main part of a substrate processing apparatus 1.

The controller 3 is constructed using, for example, a microcomputer. Thecontroller 3 has a computing unit such as a CPU, a memory unit such as afixed memory device or hard disk drive, and an input/output unit. Aprogram executed by the computing unit is stored in the memory unit.

The controller 3 controls operation of the spin motor 17, opposed memberrotating unit 25 and opposed member lifting unit 26, etc., according toa predetermined program.

The controller 3 also controls opening and closing the first processingliquid valve 30, the second processing liquid valve 38, the rinse liquidvalve 43 and the first inert gas valve 45, etc. The controller 3 alsoadjusts the degree of opening of the first flow control valve 31.

FIG. 8 is a flow diagram serving for illustration of an example ofresist removal processing carried out by the processing unit 2.

The example of resist removal processing will now be explained withreference to FIG. 2, FIG. 3 and FIGS. 6 to FIG. 8.

When resist removal processing of a substrate W is to be carried out bythe processing unit 2, a high-dose ion-implanted substrate W is importedinto the chamber 4 (step S1). The imported substrate W is one that hasnot undergone processing for ashing the resist (photoresist). That is, apattern is formed on the front surface of the substrate W, and a resistmade of a photosensitive resin or the like is formed so as to cover allor a part of the pattern.

Specifically, the controller 3 causes the hand of a substrate transferrobot CR (see FIG. 1) holding the substrate W to enter into the chamber4, with the opposed member 8 disposed at the retreat position andwithout ozone water having been accumulated in the liquid reservoirgroove 32, such that the substrate W is transferred to the spin chuck 5with its front surface (pattern-formed surface) oriented upward. Thesubstrate W thus becomes held by the spin chuck 5.

Next, the controller 3 initiates rotation of the substrate W by the spinmotor 17 (step S2). The substrate W is accelerated to a predeterminedliquid processing speed (for example, about 800 rpm), which is raised,after which the liquid processing speed is maintained.

Next, an ozone water supplying step (step S3) is carried out whereinozone water is supplied to the upper surface of the substrate W, torelease the resist from the substrate W. Specifically, the controller 3controls the opposed member lifting unit 26 to position the opposedplate 21 at the first proximal position (the position indicated by thedot-and-dash line in FIG. 2). When the opposed plate 21 is at the firstproximal position, the interval W1 between the upper surface of thesubstrate W and the opposed surface 7 of the opposed plate 21 isapproximately 1 mm (the interval W2 between the upper surface of thesubstrate Wand the lowermost part of the protrusion 35 is approximately0.3 mm), and in that state, the opposed plate 21 shields the uppersurface of the substrate W from its surrounding space.

After the opposed plate 21 has been disposed at the first proximalposition, the controller 3 controls the opposed member rotating unit 25to rotate the opposed plate 21 around the rotational axis A2. Duringthis time, for example, the rotational direction of the opposed plate 21is the same direction as the rotational direction of the substrate W,and the rotational speed of the opposed plate 21 is also approximately800 rpm, or the same as for rotation of the substrate W.

After the opposed plate 21 has been disposed at the first proximalposition, the controller 3 again opens the first processing liquid valve30. By opening of the first processing liquid valve 30, ozone water isdischarged from the central processing liquid discharge port 9 towardthe center portion of the upper surface of the substrate W (processingliquid discharging step). The ozone water discharged from the centralprocessing liquid discharge port 9 is subjected to centrifugal force byrotation of the substrate W, and flows toward the radially outer side,between the substrate W and the opposed surface 7 of the opposed member8.

After the opposed plate 21 has been disposed at the first proximalposition, the controller 3 also opens the second processing liquid valve38. By opening of the second processing liquid valve 38, ozone water isdischarged from the replenishing nozzle 36 toward the liquid reservoirgroove 32 (processing liquid supplying step). The ozone water suppliedto the liquid reservoir groove 32 accumulates in the liquid reservoirgroove 32.

The ozone water flowing toward the radially outer side between the uppersurface peripheral portion 6 of the substrate W and the opposed surface7 reaches the top of the upper surface peripheral portion 6 of thesubstrate W. During this time, as the ozone water flows between theupper surface peripheral portion 6 of the substrate W and the part ofthe opposed surface 7 surrounding the peripheral portion processingliquid discharge port 10, the pressure is reduced in the peripheralportion processing liquid discharge port 10 and the connecting hole 33,and the ozone water accumulated in the liquid reservoir groove 32 isguided to the connecting hole 33 by the Venturi effect and dischargedfrom the peripheral portion processing liquid discharge port 10. As aresult, ozone water is discharged from each peripheral portionprocessing liquid discharge port 10 toward the upper surface peripheralportion 6 of the substrate W (processing liquid discharging step). Theregion between the substrate Wand the opposed surface 7 is filled notonly by ozone water discharged from the central processing liquiddischarge port 9, but also by ozone water discharged from the peripheralportion processing liquid discharge port 10. This state (fluid-tightstate) is maintained from that point onward.

Thus, resist removal processing is carried out with the ozone water onthe upper surface of the substrate W, while the substrate Wand theopposed member 8 are each rotated, and the entire region between thesubstrate W and the opposed surface 7 is kept in a fluid-tight state forthe ozone water. This results in removal of the resist from the uppersurface of the substrate W.

When the predetermined period from opening of the first processingliquid valve 30 has elapsed, the controller 3 closes the firstprocessing liquid valve 30 to complete the ozone water supplying stepS3. Next, the controller 3 controls the opposed member lifting unit 26to retreat the opposed plate 21 to the retreat position (the positionindicated by solid lines in FIG. 2).

A rinsing step (step S4) is then carried out in which a rinse liquid issupplied to the substrate W. Specifically, the controller 3 opens therinse liquid valve 43 to discharge the rinse liquid from the rinseliquid nozzle 41 toward the center portion of the upper surface of thesubstrate W. The rinse liquid that has been discharged from the rinseliquid nozzle 41 lands on the center portion of the upper surface of thesubstrate W. The rinse liquid that has landed on the center portion ofthe upper surface of the substrate W is subjected to centrifugal forceby rotation of the substrate W and flows onto the upper surface of thesubstrate W toward the peripheral edge portion of the substrate W. Thiscauses the ozone water on the substrate W to be pushed to flow outwardby the rinse liquid, and discharged to the surrounding area of thesubstrate W. As a result, the ozone water and the removed resist arewashed out throughout the entire region of the upper surface of thesubstrate W. When the predetermined period from the start of the rinsingstep S4 has elapsed, the controller 3 closes the rinse liquid valve 43to stop discharge of the rinse liquid from the rinse liquid nozzle 41.

A spin drying step (step S5) is then carried out, in which the substrateW is dried. Specifically, the controller 3 controls the opposed memberlifting unit 26 to position the opposed plate 21 at the first proximalposition (the position indicated by the dot-and-dash line in FIG. 2).

The controller 3 also controls the spin motor 17 to accelerate thesubstrate W to a drying rotational speed (a high rotational speed, suchas several thousand rpm) that is higher than the rotational speed in theozone water supplying step S3 and the rinsing step S4, and rotation ofthe substrate W is continued at the drying rotational speed. This causeslarge centrifugal force to be applied to the liquid on the substrate W,such that the liquid adhering to the substrate W is shaken off to thesurrounding area of the substrate W. Thus, the liquid is removed fromthe substrate W and the substrate W becomes dried. In addition, thecontroller 3 controls the opposed member rotating unit 25 to rotate theopposed plate 21 in the rotational direction of the substrate W atapproximately the same speed.

Moreover, in the spin drying step S5, the controller 3 opens the firstinert gas valve 45 and supplies an inert gas into the tubular spacebetween the peripheral portion of the main body of the upper nozzle 24and the inner periphery of the opposed plate 21 (the peripheral portionof the through-hole 23). The inert gas supplied into the tubular spaceis discharged downward from the lower surface center portion of theopposed plate 21, and flows toward the radially outer side (thedirection away from the rotational axis A1), between the upper surfaceof the substrate W and the opposed surface 7 of the opposed plate 21. Asa result, a stable flow of inert gas is produced in the gap between theupper surface of the substrate W and the opposed surface 7 of theopposed plate 21, from the center portion of the substrate W toward theperipheral edge portion, and the atmosphere near the upper surface ofthe substrate W is shielded from its surrounding area. In this state,the ozone water (processing water) does not accumulate in the liquidreservoir groove 32.

While in this state, i.e. the state in which air is present inside theliquid reservoir groove 32, as the inert gas flows between the uppersurface peripheral portion 6 of the substrate W and the part of theopposed surface 7 surrounding the peripheral portion processing liquiddischarge port 10, the pressure is reduced in the peripheral portionprocessing liquid discharge port 10 and the connecting hole 33, and theair present inside the liquid reservoir groove 32 is guided to theconnecting hole 33 by the Venturi effect and discharged from theperipheral portion processing liquid discharge port 10. As a result, theair is discharged from each peripheral portion processing liquiddischarge port 10 toward the upper surface peripheral portion 6 of thesubstrate W. Furthermore, since the air is blown from the peripheralportion processing liquid discharge port 10 to the upper surfaceperipheral portion 6 of the substrate W, in addition to blowing of theinert gas from the lower surface center portion of the opposed plate 21,the upper surface peripheral portion 6 of the substrate can besatisfactorily dried. This allows the drying performance for thesubstrate W in the spin drying step S5 to be increased.

Moreover, when the prescribed time has elapsed from the start ofhigh-speed rotation of the substrate W, the controller 3 controls thespin motor 17 to stop rotation of the substrate W by the spin chuck 5(step S6). Next, the controller 3 controls the opposed member liftingunit 26 to retreat the opposed plate 21 to the retreat position (theposition indicated by the solid line in FIG. 2).

The substrate W is then carried outward from the chamber 4 (step S7).Specifically, the controller 3 causes the hand of the substrate transferrobot CR to enter into the chamber 4. The controller 3 also holds thesubstrate W that is on the spin chuck 5 in the hand of the substratetransfer robot CR. Next, the controller 3 causes the hand of thesubstrate transfer robot CR to retreat from inside the chamber 4. Thiscauses the substrate W with the resist removed from its front surface tobe carried outward from the chamber 4.

Moreover, in the processing example shown in FIG. 8, a hydrogen peroxidewater supplying step, in which hydrogen peroxide water (H₂O₂) issupplied to the upper surface of the substrate W (front surface), may becarried out before carrying out the ozone water supplying step S3 orafter carrying out the ozone water supplying step S3.

Furthermore, in the processing example shown in FIG. 8, after completionof the rinsing step S4, there may be carried out a washing chemicalliquid supplying step in which a washing chemical liquid is supplied tothe upper surface of the substrate W to remove resist residue from theupper surface of the substrate W. When a washing chemical liquidsupplying step is carried out, it may be followed by another secondrinsing step in which the chemical liquid on the upper surface of thesubstrate W is washed off with a rinse liquid.

According to the first preferred embodiment as described above, theregion between the substrate W and the opposed surface 7 is filled notonly by chemical liquid (ozone water) discharged from the centralprocessing liquid discharge port 9, but also by chemical liquiddischarged from the peripheral portion processing liquid discharge port10. Since discharge of the chemical liquid from the peripheral portionprocessing liquid discharge port 10 replenishes the chemical liquidbetween the upper surface peripheral portion 6 of the substrate W andthe opposed surface 7, the chemical liquid can be adequately spread overthe upper surface peripheral portion 6 of the substrate W. It is therebypossible to satisfactorily fill not only the region between the centerportion of the upper surface of the substrate W and the opposed surface7 but also the region between the upper surface peripheral portion 6 ofthe substrate W and the opposed surface 7 with the chemical liquid, andthus to carry out resist removal processing evenly over the uppersurface of the substrate W.

Furthermore, the peripheral portion processing liquid discharge port 10and the connecting hole 33 are brought to reduced pressure as theprocessing liquid flows between the upper surface peripheral portion 6of the substrate W and the opposed surface 7. In a state with theprocessing liquid accumulated in the liquid reservoir groove 32, reducedpressure in the peripheral portion processing liquid discharge port 10and the connecting hole 33 causes the chemical liquid accumulated in theliquid reservoir groove 32 to be guided to the connecting hole 33 by theVenturi effect, and discharged from the peripheral portion processingliquid discharge port 10. By accumulating the chemical liquid in theliquid reservoir 60, the chemical liquid is discharged from theperipheral portion processing liquid discharge port 10 duringdistribution of the chemical liquid that has been discharged from thecentral processing liquid discharge port 9, between the upper surfaceperipheral portion 6 of the substrate W and the opposed surface 7. Thisallows the chemical liquid to be discharged from the peripheral portionprocessing liquid discharge port 10 without chemical liquid beingdelivered (pressure-fed) out through the peripheral portion processingliquid discharge port 10, thereby making it possible to eliminate anyarrangement for delivering out the chemical liquid through theperipheral portion processing liquid discharge port 10.

Furthermore, as shown in FIG. 9, instead of the arrangement whereprotrusions 35 are provided in the opposed surface 7, a circular annularthick portion 71 may be formed in the opposed surface 7, further outsidein the circumferential direction of the opposed plate 21 than theperipheral portion processing liquid discharge port 10, to increase theflow rate of the chemical liquid flowing between the upper surfaceperipheral portion 6 of the substrate W and the part of the opposedsurface 7 surrounding the peripheral portion processing liquid dischargeport 10.

Also, as shown in FIG. 10, an embankment 72 may formed in the opposedplate 21, restricting outflow of the chemical liquid accumulated in theliquid reservoir groove 32 from the liquid reservoir groove 32. Theembankment 72 is formed so as to rise from the upper surface of theopposed plate 21, upward along the outer peripheral surface of theliquid reservoir groove 32. The embankment 72 has a circular annularshape surrounding the peripheral portion of the liquid reservoir groove32. In the substrate processing example described above, in the ozonewater supplying step S3, the opposed plate 21 is rotated at high speedaround the rotational axis A1, and therefore large centrifugal forceacts on the chemical liquid accumulated in the liquid reservoir groove32, but by providing an embankment 72 on the peripheral portion side ofthe liquid reservoir groove 32, it is possible to effectively restrictoutflow of the chemical liquid from the liquid reservoir 60 in the ozonewater supplying step S3. This allows the chemical liquid inside theliquid reservoir groove 32 to be satisfactorily accumulated.

When an embankment 72 is provided on the peripheral portion side of theliquid reservoir groove 32, there may be further provided a hood portion73 that protrudes from the top edge of the embankment 72, toward theradially inner side of the opposed plate 21, as shown in FIG. 11. Thehood portion 73 has a discoid shape, for example. The embankment 72 andhood portion 73 may also be provided in an integral manner. In thiscase, the hood portion 73 will be able to even more effectively restrictoutflow of the chemical liquid from the liquid reservoir groove 32. Thiswill allow the chemical liquid in the liquid reservoir 60 to be evenmore satisfactorily accumulated.

FIG. 12 is a cross-sectional view serving for illustration of anarrangement example of a first processing liquid discharge unit 11according to a second preferred embodiment of the present invention.

For the second preferred embodiment, the parts corresponding to eachpart indicated for the first preferred embodiment will be denoted by thesame reference numerals as in FIG. 1 to FIG. 11 and will not beexplained again.

The substrate processing apparatus 201 of the second preferredembodiment differs from the substrate processing apparatus 1 of thefirst preferred embodiment in that the liquid reservoir included in thesecond processing liquid discharge unit 202 is not a liquid reservoirgroove 32, but rather includes liquid reservoir spaces formed inside theopposed member 8 (first liquid reservoir space 207, second liquidreservoir space 209 and third liquid reservoir space 211). It alsodiffers from the first processing liquid discharge unit 11 in that twosets of liquid reservoir discharge units composed of a discharge port, aliquid reservoir and a connecting hole are provided, not only on theperipheral portion of the opposed member 8 but also at the intermediatepart of the opposed member 8 (the part between the center portion of theopposed member 8 and the peripheral portion of the opposed member 8).

In other words, the second processing liquid discharge unit 202 includesa first liquid reservoir discharge unit 203, a second liquid reservoirdischarge unit 204 and a third liquid reservoir discharge unit 205, anda second processing liquid supply unit 206 that supplies chemical liquid(processing liquid) to the first to third liquid reservoir dischargeunits 203 to 205.

The first liquid reservoir discharge unit 203 includes a peripheralportion processing liquid discharge port 10, a first liquid reservoirspace 207 and a connecting hole 33. The first liquid reservoir space 207is a space having a circular annular shape centered around therotational axis A2. The chemical liquid can be accumulated in the firstliquid reservoir space 207. The first liquid reservoir space 207 is aspace having a circular annular shape centered around the rotationalaxis A2, that can accumulate the chemical liquid. For this preferredembodiment, the first liquid reservoir space 207 is disposed in a mannercovering the upper region of each peripheral portion processing liquiddischarge port 10. The first liquid reservoir space 207 has arectangular cross-section.

The second liquid reservoir discharge unit 204 includes a firstintermediate part discharge port 208, a second liquid reservoir space209 and a connecting hole 33. The first intermediate part discharge port208 opens being opposed to the first upper surface intermediate part ofthe substrate W that is held by the spin chuck 5 (the part between thecenter portion of the upper surface and the upper surface peripheralportion 6). For this preferred embodiment, a plurality of firstintermediate part discharge ports 208 are disposed on the circumferencesurrounding the rotational axis A2 in a concentric manner. The pluralityof first intermediate part discharge ports 208 are disposed in thecircumferential direction of the opposed member 8, with equal intervalsbetween them, for example. The second liquid reservoir space 209 is aspace having a circular annular shape centered around the rotationalaxis A2, on the inner side of the first liquid reservoir space 207. Thechemical liquid can be accumulated in the second liquid reservoir space209.

The cross-sectional area of the connecting hole 33 is formed with asmall enough size so that the chemical liquid is not supplied to thefirst intermediate part discharge port 208 when the fluid is not flowingbetween the upper surface peripheral portion 6 of the substrate W andthe opposed surface 7. Force acts on the chemical liquid accumulated inthe second liquid reservoir space 209 toward the first intermediate partdischarge port 208 formed at the bottom part of the liquid reservoirgroove 32, by the weight of the chemical liquid itself. However, sincethe cross-sectional area of the connecting hole is sufficiently small,the chemical liquid does not infiltrate the connecting hole 33 due tothe surface tension of the chemical liquid.

The third liquid reservoir discharge unit 205 includes a secondintermediate part discharge port 210, a third liquid reservoir space 211and a connecting hole 33. The second intermediate part discharge port210 opens being opposed to the second upper surface intermediate part ofthe substrate W that is held by the spin chuck 5 (the part between thecenter portion of the upper surface and the first upper surfaceintermediate part of the substrate W). For this preferred embodiment, aplurality of second intermediate part discharge ports 210 are disposedon the circumference surrounding the rotational axis A2 in a concentricmanner. The plurality of second intermediate part discharge ports 210are disposed in the circumferential direction of the opposed member 8,with equal intervals between them, for example. The third liquidreservoir space 211 is a space having a circular annular shape centeredaround the rotational axis A2, on the inner side of the second liquidreservoir space 209. The chemical liquid can be accumulated in the thirdliquid reservoir space 211.

The cross-sectional area of the connecting hole 33 is formed with asmall enough size so that the chemical liquid is not supplied to thesecond intermediate part discharge port 210 when the fluid is notflowing between the upper surface peripheral portion 6 of the substrateW and the opposed surface 7. Force acts on the chemical liquidaccumulated in the third liquid reservoir space 211 toward the secondintermediate part discharge port 210 formed at the bottom part of theliquid reservoir groove 32, by the weight of the chemical liquid itself.However, since the cross-sectional area of the connecting hole 33 issufficiently small, the chemical liquid does not infiltrate theconnecting hole 33 due to the surface tension of the chemical liquid.

The second processing liquid supply unit 206 includes a circular annularliquid reservoir groove 212 provided on the upper spin shaft 22, aconnecting channel 213 through which the liquid reservoir groove 212 andeach of the liquid reservoir spaces 207, 209 and 211 communicate, and aprocessing liquid replenishing unit (not shown) that supplies(replenishes) the chemical liquid in the liquid reservoir groove 212. Inthe example shown in FIG. 12, the arrangement is one wherein theconnecting channel 213 includes a common pipe 214 connected to theliquid reservoir groove 212, and a plurality of branch pipes 215branching from the common pipe 214 and connected to the liquid reservoirspaces 207, 209 and 211, respectively. Alternatively, the connectingchannel may be separately connected to the liquid reservoir groove 212and to each of the liquid reservoir spaces 207, 209 and 211.

In the ozone water supplying step (S3 of FIG. 8) according to the secondpreferred embodiment as well, ozone water is discharged from the centralprocessing liquid discharge port 9 with the opposed plate 21 disposed atthe first proximal position. The ozone water flowing toward the radiallyouter side between the upper surface peripheral portion 6 of thesubstrate W and the opposed surface 7 flows from the center portion ofthe upper surface of the substrate W toward the upper surface peripheralportion 6.

During this time, as the ozone water flows between the upper surfaceperipheral portion 6 of the substrate W and the part of the opposedsurface 7 surrounding the second intermediate part discharge port 210,the pressure is reduced in the second intermediate part discharge port210 and the connecting hole 33, and the ozone water accumulated in thethird liquid reservoir space 211 is guided to the connecting hole 33 bythe Venturi effect and discharged from the second intermediate partdischarge port 210.

Also, as the ozone water flows between the upper surface peripheralportion 6 of the substrate W and the part of the opposed surface 7surrounding the first intermediate part discharge port 208, the pressureis reduced in the first intermediate part discharge port 208 and theconnecting hole 33, and the ozone water accumulated in the second liquidreservoir space 209 is guided to the connecting hole 33 by the Venturieffect and discharged from the first intermediate part discharge port208.

Likewise, as the ozone water flows between the upper surface peripheralportion 6 of the substrate W and the part of the opposed surface 7surrounding the peripheral portion processing liquid discharge port 10,the pressure is reduced in the peripheral portion processing liquiddischarge port 10 and the connecting hole 33, and the ozone wateraccumulated in the first liquid reservoir space 207 is guided to theconnecting hole 33 by the Venturi effect and discharged from theperipheral portion processing liquid discharge port 10.

This preferred embodiment exhibits the same function and effect as thefirst preferred embodiment.

Furthermore, since the liquid reservoir includes liquid reservoir spaces207, 209 and 211, outflow of the chemical liquid from the liquidreservoir spaces 207, 209 and 211 is effectively restricted in the ozonewater supplying step S3. This allows the chemical liquid inside theliquid reservoir to be satisfactorily accumulated.

FIG. 13 is a magnified cross-sectional view serving for illustration ofan arrangement example of a processing unit 302 according to a thirdpreferred embodiment of the present invention.

For the third preferred embodiment, the parts corresponding to each partindicated for the first preferred embodiment will be denoted by the samereference numerals as in FIG. 1 to FIG. 11 and will not be explainedagain.

The substrate processing apparatus 301 of the third preferred embodimentfurther includes a gas discharge unit 303 for supplying an inert gas(for example, nitrogen gas) to the center portion of the upper surfaceof the substrate W. The substrate processing apparatus 301 differs fromthe substrate processing apparatus 1 in this regard.

Moreover, the chemical liquid to be used for processing in the substrateprocessing apparatus 301, i.e. the chemical liquid discharged from thefirst processing liquid discharge unit 11, may be a liquid including atleast one from among, for example, sulfuric acid, acetic acid, nitricacid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogenperoxide water, organic acids (such as citric acid or oxalic acid),organic alkalis (such as TMAH: tetramethylammonium hydroxide), organicsolvents (such as IPA: isopropyl alcohol), surfactants and corrosioninhibitors.

The gas discharge unit 303 includes a gas nozzle 305 that has a centralgas discharge port 304 that opens being opposed to the center portion ofthe upper surface of the substrate W held by the spin chuck 5 and isinserted into the upper nozzle 24 in a vertically extending manner, asecond inert gas pipe 306 connected to the upstream end of the gasnozzle 305, a second inert gas valve 307 for opening and closing thesecond inert gas pipe 306, and a second flow control valve 308 foradjustment of the degree of opening of the second inert gas pipe 306 toadjust the discharge flow rate. The central gas discharge port 304 iscreated by a discharge port formed at the tip (bottom end) of the uppernozzle 24 together with the central processing liquid discharge port 9.

The controller 3 (see FIG. 7) controls opening and closing the secondinert gas valve 307. The controller 3 also adjusts the degree of openingof the second flow control valve 308.

When the second inert gas valve 307 is opened, the inert gas isdischarged from the central gas discharge port 304 toward the centerportion of the upper surface of the substrate W. The discharge flow rateof the inert gas from the central gas discharge port 304 can be variedby adjusting the degree of opening of the second flow control valve 308.When the second inert gas valve 307 is opened, the inert gas from theinert gas supply source is discharged downward from the central gasdischarge port 304. Thus, when the second inert gas valve 307 is openedwith the opposed plate 21 disposed at the second proximal position, theinert gas discharged from the lower surface center portion of theopposed plate 21 spreads downward between the upper surface of thesubstrate W and the opposed surface 7 of the opposed plate 21 (in adirection away from the rotational axis A1), and the air between thesubstrate W and the opposed plate 21 is exchanged with the inert gas.The inert gas flowing in the second inert gas pipe 306 is nitrogen gas,for example. The inert gas is not limited to nitrogen gas, and mayinstead be a different inert gas such as helium gas or argon gas.

FIG. 14 is a flow diagram serving for illustration of an example ofchemical liquid processing carried out by the processing unit 302.

The example of chemical liquid processing will now be explained withreference to FIG. 13 and FIG. 14. FIG. 2, FIG. 3 and FIG. 6 may bereferred to as appropriate.

The controller 3 causes the hand of a substrate transfer robot CR (seeFIG. 1) holding the substrate W to enter into the chamber 4, with theopposed member 8 disposed at the retreat position and without chemicalliquid being accumulated in the liquid reservoir groove 32, such thatthe substrate W is transferred to the spin chuck 5 with its frontsurface (pattern-formed surface) oriented upward (step S11: import ofsubstrate). The substrate W thus becomes held by the spin chuck 5.

Next, the controller 3 initiates rotation of the substrate W by the spinmotor 17 (step S12). The substrate W is accelerated to a predeterminedliquid processing speed (for example, about 800 rpm), which is raised,after which the liquid processing speed is maintained.

Next, a chemical liquid supplying step (step S13) is carried out, inwhich chemical liquid is supplied to the upper surface of the substrateW to process the upper surface of the substrate W using the chemicalliquid. Specifically, the controller 3 controls the opposed memberlifting unit 26 to position the opposed plate 21 at the second proximalposition. When the opposed plate 21 is at the second proximal position,the interval W3 between the upper surface of the substrate W and theopposed surface 7 of the opposed plate 21 is approximately 5 mm (theinterval W4 between the upper surface of the substrate W and thelowermost part of the protrusion 35 is approximately 4.3 mm), and inthat state, the opposed plate 21 shields the upper surface of thesubstrate W from its surrounding space.

After the opposed plate 21 has been disposed at the second proximalposition, the controller 3 controls the opposed member rotating unit 25to rotate the opposed plate 21 around the rotational axis A2. Duringthis time, for example, the rotational direction of the opposed plate 21is the same direction as the rotational direction of the substrate W,and the rotational speed of the opposed plate 21 is also approximately800 rpm, or the same as for rotation of the substrate W. Also, after theopposed plate 21 has been disposed at the second proximal position, thecontroller 3 again opens the first processing liquid valve 30 (see FIG.2), and opens the second inert gas valve 307.

At this time, opening of the first processing liquid valve 30 causeschemical liquid to be discharged from the central processing liquiddischarge port 9 toward the center portion of the upper surface of thesubstrate W (processing liquid discharging step). The chemical liquiddischarged from the central processing liquid discharge port 9 issubjected to centrifugal force by rotation of the substrate W, and flowstoward the radially outer side, between the substrate W and the opposedsurface 7 of the opposed member 8. Opening of the second inert gas valve307 causes the inert gas to be discharged from the central gas dischargeport 304 toward the center portion of the upper surface of the substrateW. The inert gas that has been discharged from the central gas dischargeport 304 flows toward the radially outer side, between the substrate Wand the opposed surface 7 of the opposed member 8.

After the opposed plate 21 has been disposed at the second proximalposition, the controller 3 also opens the second processing liquid valve38. By opening of the second processing liquid valve 38, chemical liquidis discharged from the replenishing nozzle 36 toward the liquidreservoir groove 32 (processing liquid supplying step). The chemicalliquid supplied to the liquid reservoir groove 32 accumulates in theliquid reservoir groove 32.

The chemical liquid flowing toward the radially outer side between theupper surface peripheral portion 6 of the substrate W and the opposedsurface 7 reaches the top of the upper surface peripheral portion 6 ofthe substrate W. A liquid film LF of the chemical liquid is thereforeformed on the upper surface peripheral portion 6 of the substrate W. Atthis time, as shown in FIG. 13, a layer of inert gas is formed flowingtoward the peripheral portion direction, between the opposed surface 7and the liquid film LF of the chemical liquid. As the inert gas flowsbetween the upper surface peripheral portion 6 of the substrate W andthe part of the opposed surface surrounding the peripheral portionprocessing liquid discharge port 10, the pressure is reduced in theperipheral portion processing liquid discharge port 10 and inside theconnecting hole 33, and the chemical liquid accumulated in the liquidreservoir groove 32 is guided to the connecting hole 33 by the Venturieffect and discharged from the peripheral portion processing liquiddischarge port 10. As a result, chemical liquid is discharged from eachperipheral portion processing liquid discharge port 10 toward the uppersurface peripheral portion 6 of the substrate W (processing liquiddischarging step). At this time, as shown in FIG. 15 described below,the chemical liquid from the peripheral portion processing liquiddischarge port 10 is discharged in atomized form (sprayed). The chemicalliquid is thus supplied to the upper surface peripheral portion 6 of thesubstrate W. Chemical liquid processing of the substrate W is thuscarried out in this state, and the upper surface of the substrate W isprocessed by the chemical liquid.

When the predetermined period from opening of the first processingliquid valve 30 has elapsed, the controller 3 closes the firstprocessing liquid valve 30. The controller 3 also closes the secondinert gas valve 307. This completes the chemical liquid supplying stepS13. Next, the controller 3 controls the opposed member lifting unit 26to retreat the opposed plate 21 to the retreat position (the positionindicated by the solid line in FIG. 2).

A rinsing step (step S14) is then carried out in which a rinse liquid issupplied to the substrate W. The rinsing step S14 is a step equivalentto the rinsing step of the first preferred embodiment (S4 of FIG. 8).

Next, a spin drying step (step S15) is carried out, in which thesubstrate W is dried. The spin drying step S15 is a step equivalent tothe spin drying step of the first preferred embodiment (S5 of FIG. 8).

Moreover, when the prescribed time has elapsed from the start ofhigh-speed rotation of the substrate W, the controller 3 controls thespin motor 17 to stop rotation of the substrate W by the spin chuck 5(step S16). Thereafter, the controller 3 controls the opposed memberlifting unit 26 to retreat the opposed plate 21 to the retreat position(the position indicated by the solid line in FIG. 2).

The substrate W is then carried outside of the chamber 4 (step S17).Carrying the substrate W outside (S17) is a step equivalent to carryingthe substrate W outside for the first preferred embodiment (S7 of FIG.8).

Thus, according to the third preferred embodiment, discharge of thechemical liquid from the peripheral portion processing liquid dischargeport 10 replenishes the chemical liquid between the upper surfaceperipheral portion 6 of the substrate W and the opposed surface 7, andtherefore the chemical liquid can be adequately spread over the uppersurface peripheral portion 6 of the substrate W. It is thereby possibleto satisfactorily fill not only the region between the center portion ofthe upper surface of the substrate W and the opposed surface 7, but alsothe region between the upper surface peripheral portion 6 of thesubstrate W and the opposed surface 7, with the chemical liquid, andthus to carry out chemical liquid processing evenly over the uppersurface of the substrate W.

Furthermore, the peripheral portion processing liquid discharge port 10and the inside of the connecting hole 33 are brought to reduced pressureas the inert gas flows between the upper surface peripheral portion 6 ofthe substrate W and the opposed surface 7. With the chemical liquidaccumulated in the liquid reservoir groove 32, reduced pressure in theperipheral portion processing liquid discharge port 10 and the inside ofthe connecting hole 33 causes the chemical liquid accumulated in theliquid reservoir groove 32 to be guided to the connecting hole 33 by theVenturi effect, and to be discharged from the peripheral portionprocessing liquid discharge port 10. By accumulating the chemical liquidin the liquid reservoir groove 32, the chemical liquid is dischargedfrom the peripheral portion processing liquid discharge port 10 togetherwith distribution of the inert gas between the upper surface peripheralportion 6 of the substrate W and the opposed surface 7. This allows thechemical liquid to be discharged from the peripheral portion processingliquid discharge port 10 without chemical liquid being delivered outthrough the peripheral portion processing liquid discharge port 10,thereby making it possible to eliminate any arrangement for deliveringout the chemical liquid through the peripheral portion processing liquiddischarge port 10.

As in the modification example shown in FIG. 15, an embankment 372 maybe formed in the opposed plate 21, restricting outflow of the chemicalliquid accumulated in the liquid reservoir groove 32 from the liquidreservoir groove 32. Also, as in the modification example shown in FIG.15, the peripheral portion processing liquid discharge port 10 may bedisposed near the peripheral portion edge of the bottom part of theliquid reservoir groove 32.

The embankment 372 is formed so as to rise from the upper surface of theopposed plate 21, upward along the outer peripheral surface of theliquid reservoir groove 32. The embankment 372 has a circular annularshape surrounding the peripheral portion of the liquid reservoir groove32.

In the substrate processing example described above, in the chemicalliquid supplying step S13, the opposed plate 21 is rotated at high speedaround the rotational axis A1, and therefore large centrifugal forceacts on the chemical liquid accumulated in the liquid reservoir groove32, but by providing an embankment 372 on the peripheral portion side ofthe liquid reservoir groove 32, it is possible to effectively restrictoutflow of the chemical liquid from the liquid reservoir 60 in thechemical liquid supplying step S13. This allows the chemical liquidinside the liquid reservoir groove 32 to be satisfactorily accumulated.

As in the modification example shown in FIG. 16, an embankment 373, thatrestricts outflow of the chemical liquid accumulated in the liquidreservoir groove 32 from the liquid reservoir groove 32, may have anessentially arc-shaped cross-section as it runs upward approaching therotational axis A1 side. When a plurality of liquid reservoir grooves 32are provided in a row in the radial direction of the opposed plate 21,the heights of the embankments 373 corresponding to each of the liquidreservoir grooves 32 may increase toward the peripheral portion side ofthe opposed plate 21, as shown in FIG. 16.

In FIG. 16, gas discharge ports 381 for discharge of inert gas areprovided for each of the liquid reservoir grooves 32, to purge theliquid reservoir grooves 32. Each of the gas discharge ports 381 aresupplied with inert gas through branch pipes 382 branching from the gasnozzle 305.

FIG. 17 is a cross-sectional view serving for illustration of anarrangement example of a substrate processing apparatus 401 according toa fourth preferred embodiment of the present invention. For the fourthpreferred embodiment, the parts corresponding to each part indicated forthe second preferred embodiment will be denoted by the same referencenumerals as in FIG. 13 and will not be explained again.

The third processing liquid discharge unit 402 of the fourth preferredembodiment differs from the second processing liquid discharge unit 202of the second preferred embodiment in that, instead of the secondprocessing liquid supply unit 206, it includes a third processing liquidsupply unit 406 that supplies chemical liquid to first to third liquidreservoir discharge units 203 to 205 by gas pressure-feeding.

The substrate processing apparatus 401 of the fourth preferredembodiment further also differs from the substrate processing apparatus201 of the second preferred embodiment in that it further includes a gasdischarge unit 303 for supplying an inert gas (for example, nitrogengas) to the center portion of the upper surface of the substrate W.

The third processing liquid supply unit 406 includes a circular annularliquid reservoir space 412 provided on an upper spin shaft 22, aconnecting channel 413 through which the liquid reservoir space 412 andeach of the liquid reservoir spaces 207, 209 and 211 communicate, achemical liquid pressure-feeding unit 416 whereby gas pressure-feedingof the chemical liquid accumulated in the liquid reservoir space 412takes place to the liquid reservoir spaces 207, 209 and 211 via theconnecting channel 413, and a chemical liquid replenishing unit 417 thatreplenishes the chemical liquid to the liquid reservoir space 412. Inthe example of FIG. 17, the arrangement is one wherein the connectingchannel 413 includes a common pipe 414 connected to the liquid reservoirspace 412, and a plurality of branch pipes 415 branching from the commonpipe 414 and connected to the liquid reservoir spaces 207, 209 and 211,respectively.

Alternatively, the connecting channel may be separately connected to theliquid reservoir space 412 and to each of the liquid reservoir spaces207, 209 and 211.

The chemical liquid pressure-feeding unit 416 includes a gas nozzle 418that blows gas toward the liquid reservoir space 412, a third inert gaspipe 419 that supplies an inert gas such as nitrogen gas to the gasnozzle 418, in a high-pressure state, and a third inert gas valve 420that opens and closes the third inert gas pipe 419. The inert gasflowing in the third inert gas pipe 419 is nitrogen gas, for example.The inert gas is not limited to nitrogen gas, and may instead be adifferent inert gas such as helium gas or argon gas.

The gas nozzle 418 is opposed to the liquid reservoir space 412 across afirst labyrinth structure 421. Since the first labyrinth structure 421is provided, it is possible to supply the inert gas from the gas nozzle418 to the liquid reservoir space 412 while restricting outflow of gasfrom the liquid reservoir space 412, regardless of the rotational stateof the opposed plate 21.

When the third inert gas valve 420 is opened, high-pressure inert gas isblown out from the gas nozzle 418. As a result, the chemical liquidaccumulated in the liquid reservoir space 412 is supplied to the liquidreservoir spaces 207, 209 and 211.

The chemical liquid replenishing unit 417 includes a replenishing nozzle423 that discharges chemical liquid toward the liquid reservoir space412, a replenishing pipe 424 that supplies the chemical liquid to thereplenishing nozzle 423, and a replenishing valve 425 that opens andcloses the replenishing pipe 424. The replenishing nozzle 423 is opposedto the liquid reservoir space 412 across a second labyrinth structure426. Thus, it is possible to supply the chemical liquid from thereplenishing nozzle 423 to the liquid reservoir space 412 whilerestricting outflow of gas from the liquid reservoir space 412,regardless of the rotational state of the opposed plate 21.

The controller 3 (see FIG. 7) controls opening and closing the thirdinert gas valve 420 and replenishing valve 425.

According to the fourth preferred embodiment, processing is carried outin an equivalent manner to the substrate processing example of the thirdpreferred embodiment. In the chemical liquid supplying step (S13 of FIG.14), the controller 3 opens the third inert gas valve 420 to supply thechemical liquid toward the liquid reservoir spaces 207, 209 and 211,while the opposed plate 21 is disposed at the second proximal position.The chemical liquid supplied to the liquid reservoir spaces 207, 209 and211 is accumulated inside the liquid reservoir spaces 207, 209 and 211.

In this state, the controller 3 opens the first processing liquid valve30 to discharge chemical liquid from the central processing liquiddischarge port 9, and opens the second inert gas valve 307 to dischargeinert gas from the central gas discharge port 304. The inert gas thathas been discharged from the central gas discharge port 304 flows towardthe radially outer side, between the substrate Wand the opposed surface7 of the opposed member 8, flowing between the peripheral portion of theupper surface of the substrate Wand the peripheral portion of theopposed surface 7. As the inert gas flows between the part of theopposed surface 7 surrounding the peripheral portion processing liquiddischarge port 10, the pressure is reduced in the peripheral portionprocessing liquid discharge port 10 and inside the connecting hole 33,and the chemical liquid accumulated in the liquid reservoir groove 32 isguided to the connecting hole 33 by the Venturi effect and dischargedfrom the peripheral portion processing liquid discharge port 10. As aresult, the chemical liquid is discharged from each peripheral portionprocessing liquid discharge port 10 toward the upper surface peripheralportion 6 of the substrate W.

During this time, as the inert gas flows between the upper surfaceperipheral portion 6 of the substrate W and the part of the opposedsurface 7 surrounding the second intermediate part discharge port 210,the pressure is reduced in the second intermediate part discharge port210 and inside the connecting hole 33, and the chemical liquidaccumulated in the third liquid reservoir space 211 is guided to theconnecting hole 33 by the Venturi effect and discharged from the secondintermediate part discharge port 210.

Also, as the inert gas flows between the upper surface peripheralportion 6 of the substrate W and the part of the opposed surface 7surrounding the first intermediate part discharge port 208, the pressureis reduced in the first intermediate part discharge port 208 and insidethe connecting hole 33, and the chemical liquid accumulated in thesecond liquid reservoir space 209 is guided to the connecting hole 33 bythe Venturi effect and discharged from the first intermediate partdischarge port 208.

Likewise, as the inert gas flows between the upper surface peripheralportion 6 of the substrate W and the part of the opposed surface 7surrounding the peripheral portion processing liquid discharge port 10,the pressure is reduced in the peripheral portion processing liquiddischarge port 10 and inside the connecting hole 33, and the chemicalliquid accumulated in the first liquid reservoir space 207 is guided tothe connecting hole 33 by the Venturi effect and discharged from theperipheral portion processing liquid discharge port 10.

This preferred embodiment exhibits the same function and effect as thethird preferred embodiment.

Four embodiments of the present invention were explained above, but theinvention may also be implemented in yet other embodiments.

For example, for the first to fourth preferred embodiments, thecross-sectional areas of the connecting holes 33 may be formed withsizes such that the chemical liquid (processing liquid) is supplied tothe discharge ports 10, 208, 210 when the fluid is not flowing betweenthe upper surface peripheral portion 6 of the substrate W and theopposed surface 7.

For the third preferred embodiment, when an embankment 372 (see FIG. 15)is provided on the peripheral portion side of the liquid reservoirgroove 32, there may be further provided a hood portion (equivalent tothe hood portion 73 of FIG. 11) that protrudes from the top edge of theembankment 372, toward the radially inner side of the opposed plate 21.

Also, for the second to fourth preferred embodiments, a circular annularthick portion 71 may be formed in the opposed surface 7, at thedischarge ports 10, 208, 210, further outside in the circumferentialdirection of the opposed plate 21 than the discharge ports 10, 208, 210,to increase the flow rate of the chemical liquid flowing between theupper surface peripheral portion 6 of the substrate W and the part ofthe opposed surface 7 surrounding the discharge ports 10, 208, 210.

Moreover, for the first to fourth preferred embodiments, instead of aplurality of discharge ports 10, 208, 210 arranged in thecircumferential direction, the discharge ports 10, 208, 210 may bearranged in a circular annular fashion centered around the rotationalaxis A2. Alternatively, the discharge ports 10, 208, 210 may be disposedin a maldistributed arrangement in the circumferential direction of theopposed plate 21, instead of a plurality of them being provided alongthe circumferential direction of the opposed plate 21.

Also, in the first to fourth preferred embodiments, the protrusions 35may be provided intermittently, only at parts corresponding to thesurrounding area of the discharge ports 10, 208, 210, instead of beingcircular annular and centered around the rotational axis A2.

The protrusions 35 of the first to fourth preferred embodiments may alsobe omitted.

Moreover, for the second preferred embodiment, each of the liquidreservoir spaces 207, 209 and 211 may be a liquid reservoir groove 32 asaccording to the first preferred embodiment. In other words, liquidreservoir discharge units composed of a discharge port, a liquidreservoir groove 32 and a connecting hole 33 may be provided, not onlyon the peripheral portion of the opposed member 8 but also at theintermediate part of the opposed member 8 (the part between the centerportion of the opposed member 8 and the peripheral portion of theopposed member 8).

Each of the substrate processing examples described above was explainedassuming that the substrate W is rotated around the rotational axis A2concomitantly with supply of the chemical liquid to the substrate W, butthe chemical liquid may instead be supplied to the substrate W whilerotation of the substrate W is halted.

Moreover, each of the substrate processing examples described above wasexplained assuming that the opposed plate 21 is retreated to the retreatposition in the rinsing step S4, but the opposed plate 21 may instead bedisposed at the proximal position.

Also, when the chemical liquid to be discharged from the centralprocessing liquid discharge port 9 has a liquid temperature that ishigher than ordinary temperature, it cools during the course of flowingover the upper surface of the substrate W, potentially resulting inreduction in the liquid temperature of the chemical liquid at the uppersurface peripheral portion 6 of the substrate W. As a result, theprocessing rate for the upper surface peripheral portion 6 of thesubstrate W can potentially be lower than for the center portion of theupper surface of the substrate W.

In this case, chemical liquid having a higher liquid temperature thanordinary temperature (equal to the liquid temperature of the chemicalliquid discharged from the central processing liquid discharge port 9)is discharged from the peripheral portion processing liquid dischargeport 10. This allows a high liquid temperature to be maintained for thechemical liquid at the upper surface of the substrate W, and can furtherincrease the uniformity of chemical liquid processing on the uppersurface of the substrate W.

Moreover, in the substrate processing examples of the first and secondpreferred embodiments, the explanation assumed that resist removalprocessing is carried out using ozone water as the processing liquid,but the invention may also be applied to other types of processing (suchas processing by etching or washing). In such cases, the chemical liquidto be used as the processing liquid is a liquid including at least onefrom among, for example, sulfuric acid, acetic acid, nitric acid,hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxidewater, organic acids (such as citric acid or oxalic acid), organicalkalis (such as TMAH: tetramethylammonium hydroxide), organic solvents(such as IPA: isopropyl alcohol), surfactants and corrosion inhibitors.

In addition, the processing liquid used in the first to fourth preferredembodiments may include water. The water may be deionized water (DIW),for example, but is not limited to DIW and may instead be carbonatedwater, electrolytic ion water, hydrogen water or diluted (for example,about 10 ppm to 100 ppm) hydrochloric acid water.

Furthermore, the first to fourth preferred embodiments were explainedassuming that the substrate processing apparatuses 1, 201, 301 and 401are apparatuses that process a discoid substrate, but the substrateprocessing apparatuses 1, 201, 301 and 401 may instead be apparatusesthat process a polygonal substrate, such as a glass panel for a liquidcrystal display device.

While preferred embodiments of the present invention have been describedin detail above, these are merely specific examples used to clarify thetechnical contents of the present invention, and the present inventionshould not be interpreted as being limited only to these specificexamples, the spirit and scope of the present invention being limitedonly by the appended claims.

What is claimed is:
 1. A substrate processing method that removes resistfrom an upper surface of a substrate, wherein the upper surface of thesubstrate is processed with a processing liquid supplied from aprocessing liquid discharge unit including a center portion dischargeport that opens on an opposed surface being opposed to the upper surfaceof the substrate and that opposes to a center portion of the uppersurface of the substrate, and a peripheral portion discharge port thatopens on the opposed surface and that opposes to a peripheral portion ofthe upper surface of the substrate, the substrate processing methodincluding: a substrate rotating step of rotating the substrate around avertical rotational axis running through the center portion, and aprocessing liquid discharging step of, simultaneously with the substraterotating step, discharging the processing liquid from the center portiondischarge port to supply the processing liquid between the substrate andthe opposed surface, and discharging the processing liquid from theperipheral portion discharge port to replenish the processing liquidbetween the substrate and the opposed surface, so as to fill a spacebetween the substrate and the opposed surface with the processingliquid, the processing liquid including a chemical liquid that includesozone water that removes the resist from the upper surface of thesubstrate.
 2. A substrate processing method according to claim 1,wherein the processing liquid discharge unit includes a liquid reservoirthat is capable of accumulating the processing liquid to be dischargedfrom the peripheral portion discharge port, and the method furtherincludes a processing liquid supplying step of supplying the processingliquid to the liquid reservoir when the processing liquid dischargingstep is initiated.
 3. A substrate processing method according to claim1, wherein the processing liquid discharge unit includes a liquidreservoir that is capable of accumulating the processing liquid to bedischarged from the peripheral portion discharge port, and the liquidreservoir is situated above the peripheral portion discharge port, aninterior of the liquid reservoir and the peripheral portion dischargeport are connected via a connecting hole, and the processing liquidaccumulated in the liquid reservoir is discharged from the peripheralportion discharge port via the connecting hole by reduction in pressurein the connecting hole, as fluid is distributed between the peripheralportion of the upper surface of the substrate and a surrounding regionof the peripheral portion discharge port on the opposed surface, thesubstrate processing method further including a spin drying step inwhich the substrate is subjected to high-speed rotation around thevertical rotational axis to cause drying by shaking off, with theprocessing liquid not being accumulated in the liquid reservoir.
 4. Asubstrate processing method according to claim 1, wherein the opposedsurface opposes to an entire region of the upper surface of thesubstrate.
 5. A substrate processing method, wherein an upper surface ofa substrate is processed with a processing liquid supplied from aprocessing liquid discharge unit including a center portion dischargeport that opens on an opposed surface being opposed to the upper surfaceof the substrate and that opposes to a center portion of the uppersurface of the substrate, and a peripheral portion discharge port thatopens on the opposed surface and that opposes to a peripheral portion ofthe upper surface of the substrate, the substrate processing methodincluding: a substrate rotating step of rotating the substrate around avertical rotational axis running through the center portion, and aprocessing liquid discharging step of, simultaneously with the substraterotating step, discharging the processing liquid from the center portiondischarge port to supply the processing liquid between the substrate andthe opposed surface, and discharging the processing liquid from theperipheral portion discharge port to replenish the processing liquidbetween the substrate and the opposed surface, so as to fill a spacebetween the substrate and the opposed surface with the processingliquid, wherein the processing liquid discharge unit includes a liquidreservoir that is capable of accumulating the processing liquid to bedischarged from the peripheral portion discharge port, and the liquidreservoir is situated above the peripheral portion discharge port, aninterior of the liquid reservoir and the peripheral portion dischargeport are connected via a connecting hole, and the processing liquidaccumulated in the liquid reservoir is discharged from the peripheralportion discharge port via the connecting hole by reduction in pressurein the connecting hole, as fluid is distributed between the peripheralportion of the upper surface of the substrate and a surrounding regionof the peripheral portion discharge port on the opposed surface.
 6. Asubstrate processing method according to claim 5, further including aprocessing liquid supplying step of supplying the processing liquid tothe liquid reservoir when the processing liquid discharging step isinitiated.
 7. A substrate processing method according to claim 5,further including a spin drying step in which the substrate is subjectedto high-speed rotation around the vertical rotational axis to causedrying by shaking off, with the processing liquid not being accumulatedin the liquid reservoir.
 8. A substrate processing method according toclaim 5, wherein the processing liquid including a chemical liquid thatincludes ozone water that removes resist from the upper surface of thesubstrate.